PMOS

Description

The PMOS model is a simple model of a p-channel metal-oxide semiconductorFET. It differs slightly from the device used in the SPICE simulator.For more details please care for H. Spiro.

The model does not consider capacitances. A high drain-source resistance RDSis included to avoid numerical difficulties.

Please note:In case of useHeatPort=true the temperature dependence of the electricalbehavior is not modelled yet. The parameters are not temperature dependent.

References:

Spiro, H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.

Some typical parameter sets are:

  W       L      Beta        Vt    K2     K5      DW       DL  m       m      A/V^2       V     -      -       m        m  50.e-6  8.e-6  0.0085e-3  -0.15  0.41   0.839  -3.8e-6  -4.0e-6  20.e-6  6.e-6  0.0105e-3  -1.0   0.41   0.839  -2.5e-6  -2.1e-6  30.e-6  5.e-6  0.0059e-3  -0.3   0.98   1.01    0       -3.9e-6  30.e-6  5.e-6  0.0152e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6  30.e-6  5.e-6  0.0163e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6  30.e-6  5.e-6  0.0182e-3  -0.69  0.086  1.06   -0.1e-6  -0.6e-6  20.e-6  6.e-6  0.0074e-3  -1.    0.4    0.59    0        0