NMOS

Description

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

W       L      Beta         Vt      K2     K5       dW       dLm       m      A/V^2        V       -      -        m        m12.e-6  4.e-6  0.062e-3    -4.5     0.24   0.61    -1.2e-6  -0.9e-6      depletion60.e-6  3.e-6  0.048e-3     0.1     0.08   0.68    -1.2e-6  -0.9e-6      enhancement12.e-6  4.e-6  0.0625e-3   -0.8     0.21   0.78    -1.2e-6  -0.9e-6      zero50.e-6  8.e-6  0.0299e-3    0.24    1.144  0.7311  -5.4e-6  -4.e-620.e-6  6.e-6  0.041e-3     0.8     1.144  0.7311  -2.5e-6  -1.5e-630.e-6  9.e-6  0.025e-3    -4.0     0.861  0.878   -3.4e-6  -1.74e-630.e-6  5.e-6  0.031e-3     0.6     1.5    0.72     0       -3.9e-650.e-6  6.e-6  0.0414e-3   -3.8     0.34   0.8     -1.6e-6  -2.e-6       depletion50.e-6  5.e-6  0.03e-3      0.37    0.23   0.86    -1.6e-6  -2.e-6       enhancement50.e-6  6.e-6  0.038e-3    -0.9     0.23   0.707   -1.6e-6  -2.e-6       zero20.e-6  4.e-6  0.06776e-3   0.5409  0.065  0.71    -0.8e-6  -0.2e-620.e-6  4.e-6  0.06505e-3   0.6209  0.065  0.71    -0.8e-6  -0.2e-620.e-6  4.e-6  0.05365e-3   0.6909  0.03   0.8     -0.3e-6  -0.2e-620.e-6  4.e-6  0.05365e-3   0.4909  0.03   0.8     -0.3e-6  -0.2e-612.e-6  4.e-6  0.023e-3    -4.5     0.29   0.6      0        0           depletion60.e-6  3.e-6  0.022e-3     0.1     0.11   0.65     0        0           enhancement12.e-6  4.e-6  0.038e-3    -0.8     0.33   0.6      0        0           zero20.e-6  6.e-6  0.022e-3     0.8     1      0.66     0        0

References: [Spiro1990]