HeatingNMOS

Simple MOS Transistor with heating port

    HeatingNMOS

Library

Modelica/Electrical/Analog/Semiconductors

Description

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for H. Spiro.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

  W       L      Beta         Vt      K2     K5       DW       DL  m       m      A/V^2        V       -      -        m        m  12.e-6  4.e-6  0.062e-3    -4.5     0.24   0.61    -1.2e-6  -0.9e-6      depletion  60.e-6  3.e-6  0.048e-3     0.1     0.08   0.68    -1.2e-6  -0.9e-6      enhancement  12.e-6  4.e-6  0.0625e-3   -0.8     0.21   0.78    -1.2e-6  -0.9e-6      zero  50.e-6  8.e-6  0.0299e-3    0.24    1.144  0.7311  -5.4e-6  -4.e-6  20.e-6  6.e-6  0.041e-3     0.8     1.144  0.7311  -2.5e-6  -1.5e-6  30.e-6  9.e-6  0.025e-3    -4.0     0.861  0.878   -3.4e-6  -1.74e-6  30.e-6  5.e-6  0.031e-3     0.6     1.5    0.72     0       -3.9e-6  50.e-6  6.e-6  0.0414e-3   -3.8     0.34   0.8     -1.6e-6  -2.e-6       depletion  50.e-6  5.e-6  0.03e-3      0.37    0.23   0.86    -1.6e-6  -2.e-6       enhancement  50.e-6  6.e-6  0.038e-3    -0.9     0.23   0.707   -1.6e-6  -2.e-6       zero  20.e-6  4.e-6  0.06776e-3   0.5409  0.065  0.71    -0.8e-6  -0.2e-6  20.e-6  4.e-6  0.06505e-3   0.6209  0.065  0.71    -0.8e-6  -0.2e-6  20.e-6  4.e-6  0.05365e-3   0.6909  0.03   0.8     -0.3e-6  -0.2e-6  20.e-6  4.e-6  0.05365e-3   0.4909  0.03   0.8     -0.3e-6  -0.2e-6  12.e-6  4.e-6  0.023e-3    -4.5     0.29   0.6      0        0           depletion  60.e-6  3.e-6  0.022e-3     0.1     0.11   0.65     0        0           enhancement  12.e-6  4.e-6  0.038e-3    -0.8     0.33   0.6      0        0           zero  20.e-6  6.e-6  0.022e-3     0.8     1      0.66     0        0

References:

Spiro, H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.

Parameters

HeatingNMOS_0

NameLabelDescriptionData TypeValid Values

mo_W

W

Width

Scalar

mo_L

L

Length

Scalar

mo_Beta

Beta

Transconductance parameter

Scalar

mo_Vt

Vt

Zero bias threshold voltage

Scalar

mo_K2

K2

Bulk threshold parameter

Scalar

mo_K5

K5

Reduction of pinch-off region

Scalar

mo_dW

dW

Narrowing of channel

Scalar

mo_dL

dL

Shortening of channel

Scalar

mo_RDS

RDS

Drain-Source-Resistance

Scalar

mo_Tnom

Tnom

Parameter measurement temperature

Scalar

mo_kvt

kvt

Fitting parameter for Vt

Scalar

mo_kk2

kk2

Fitting parameter for K2

Scalar

mo_useHeatPort

useHeatPort

=true, if heatPort is enabled

Number

0
1

mo_T

T

Fixed device temperature if useHeatPort = false

Scalar

mo_T_heatPort

T_heatPort

T_heatPort

Structure

mo_T_heatPort/fixed

fixed

Cell of scalars

true
false

mo_T_heatPort/start

start

Cell of scalars

HeatingNMOS_1

NameLabelDescriptionData TypeValid Values

mo__nmodifiers

Number of Modifiers

Specifies the number of modifiers

Number

mo__modifiers

Modifiers

Add new modifier

Structure

mo__modifiers/varname

Variable name

Cell of strings

'LossPower'
'v'
'uds'
'ubs'
'ugst'
'ud'
'us'
'id'
'gds'
'beta_t'
'vt_t'
'k2_t'

mo__modifiers/attribute

Attribute

Cell of strings

'start'
'fixed'

mo__modifiers/value

Value

Ports

NameTypeDescriptionIO TypeNumber

D

implicit

Drain

input

1

G

implicit

Gate

input

2

S

implicit

Source

input

3

B

implicit

Bulk

input

4

Port 5

implicit

Conditional heat port

input

mo_useHeatPort

See Also