HeatingNMOS

Simple MOS Transistor with heating port

HeatingNMOS

Library

Modelica/Electrical/Analog/Semiconductors

Description

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for H. Spiro.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

  W       L      Beta         Vt      K2     K5       DW       DL
  m       m      A/V^2        V       -      -        m        m
  12.e-6  4.e-6  0.062e-3    -4.5     0.24   0.61    -1.2e-6  -0.9e-6      depletion
  60.e-6  3.e-6  0.048e-3     0.1     0.08   0.68    -1.2e-6  -0.9e-6      enhancement
  12.e-6  4.e-6  0.0625e-3   -0.8     0.21   0.78    -1.2e-6  -0.9e-6      zero
  50.e-6  8.e-6  0.0299e-3    0.24    1.144  0.7311  -5.4e-6  -4.e-6
  20.e-6  6.e-6  0.041e-3     0.8     1.144  0.7311  -2.5e-6  -1.5e-6
  30.e-6  9.e-6  0.025e-3    -4.0     0.861  0.878   -3.4e-6  -1.74e-6
  30.e-6  5.e-6  0.031e-3     0.6     1.5    0.72     0       -3.9e-6
  50.e-6  6.e-6  0.0414e-3   -3.8     0.34   0.8     -1.6e-6  -2.e-6       depletion
  50.e-6  5.e-6  0.03e-3      0.37    0.23   0.86    -1.6e-6  -2.e-6       enhancement
  50.e-6  6.e-6  0.038e-3    -0.9     0.23   0.707   -1.6e-6  -2.e-6       zero
  20.e-6  4.e-6  0.06776e-3   0.5409  0.065  0.71    -0.8e-6  -0.2e-6
  20.e-6  4.e-6  0.06505e-3   0.6209  0.065  0.71    -0.8e-6  -0.2e-6
  20.e-6  4.e-6  0.05365e-3   0.6909  0.03   0.8     -0.3e-6  -0.2e-6
  20.e-6  4.e-6  0.05365e-3   0.4909  0.03   0.8     -0.3e-6  -0.2e-6
  12.e-6  4.e-6  0.023e-3    -4.5     0.29   0.6      0        0           depletion
  60.e-6  3.e-6  0.022e-3     0.1     0.11   0.65     0        0           enhancement
  12.e-6  4.e-6  0.038e-3    -0.8     0.33   0.6      0        0           zero
  20.e-6  6.e-6  0.022e-3     0.8     1      0.66     0        0

References:

Spiro, H.: Simulation integrierter Schaltungen. R. Oldenbourg Verlag Muenchen Wien 1990.

Parameters

HeatingNMOS_0

Name	Label	Description	Data Type	Valid Values
mo_W	W	Width	Scalar
mo_L	L	Length	Scalar
mo_Beta	Beta	Transconductance parameter	Scalar
mo_Vt	Vt	Zero bias threshold voltage	Scalar
mo_K2	K2	Bulk threshold parameter	Scalar
mo_K5	K5	Reduction of pinch-off region	Scalar
mo_dW	dW	Narrowing of channel	Scalar
mo_dL	dL	Shortening of channel	Scalar
mo_RDS	RDS	Drain-Source-Resistance	Scalar
mo_Tnom	Tnom	Parameter measurement temperature	Scalar
mo_kvt	kvt	Fitting parameter for Vt	Scalar
mo_kk2	kk2	Fitting parameter for K2	Scalar
mo_useHeatPort	useHeatPort	=true, if heatPort is enabled	Number	0 1
mo_T	T	Fixed device temperature if useHeatPort = false	Scalar

HeatingNMOS_1

Name	Label	Description	Data Type	Valid Values
mo_LossPower	LossPower	LossPower	Structure
mo_LossPower/fixed	fixed		Cell of scalars	true false
mo_LossPower/start	start		Cell of scalars
mo_T_heatPort	T_heatPort	T_heatPort	Structure
mo_T_heatPort/fixed	fixed		Cell of scalars	true false
mo_T_heatPort/start	start		Cell of scalars

Ports

Name	Type	Description	IO Type	Number
D	implicit	Drain	input	1
G	implicit	Gate	input	2
S	implicit	Source	input	3
B	implicit	Bulk	input	4
Port 5	implicit	Conditional heat port	input	mo_useHeatPort

HeatingNMOS

Library

Description

Parameters

Ports

See Also