model_mos3N
Level 3 MOSfet model with Meyer capacitance model redefinition
Library
Spice/Analog/Basic/models
Description
.model definitionParameters
| Name | Label | Description | Data Type | Valid Values |
|---|---|---|---|---|
sp_mname | Model Name | The model name of the new model that the user wants to create | String | |
sp_NMOS | NMOS | String | ||
sp_level | Level | Scalar | ||
sp_vto | Threshold voltage | Scalar | ||
sp_kp | Transconductance parameter | Scalar | ||
sp_gamma | Bulk threshold parameter | Scalar | ||
sp_phi | Surface potential | Scalar | ||
sp_rd | Drain ohmic resistance | Scalar | ||
sp_rs | Source ohmic resistance | Scalar | ||
sp_cbd | B-D junction capacitance | Scalar | ||
sp_cbs | B-S junction capacitance | Scalar | ||
sp_is | Bulk junction sat. current | Scalar | ||
sp_pb | Bulk junction potential | Scalar | ||
sp_cgso | Gate-source overlap cap. | Scalar | ||
sp_cgdo | Gate-drain overlap cap. | Scalar | ||
sp_cgbo | Gate-bulk overlap cap. | Scalar | ||
sp_rsh | Sheet resistance | Scalar | ||
sp_cj | Bottom junction cap per area | Scalar | ||
sp_mj | Bottom grading coefficient | Scalar | ||
sp_cjsw | Side junction cap per area | Scalar | ||
sp_mjsw | Side grading coefficient | Scalar | ||
sp_tox | Oxide thickness | Scalar | ||
sp_ld | Lateral diffusion | Scalar | ||
sp_xl | Length mask adjustment | Scalar | ||
sp_wd | Width Narrowing (Diffusion) | Scalar | ||
sp_xw | Width mask adjustment | Scalar | ||
sp_u0 | Surface mobility | Scalar | ||
sp_fc | Forward bias jct. fit parm. | Scalar | ||
sp_nsub | Substrate doping | Scalar | ||
sp_tpg | Gate type | Scalar | ||
sp_nss | Surface state density | Scalar | ||
sp_vmax | Maximum carrier drift velocity | Scalar | ||
sp_xj | Junction depth | Scalar | ||
sp_nfs | Fast surface state density | Scalar | ||
sp_eta | Vds dependence of threshold voltage | Scalar | ||
sp_delta | Width effect on threshold | Scalar | ||
sp_theta | Vgs dependence on mobility | Scalar | ||
sp_kappa | Kappa | Scalar | ||
sp_Spice | Additional Spice Parameters | String |